Ion-implantation in a nutshell :
Ion implantation is a surface modification process in which a beam of ions is extracted from a metal or gas and targeted on a substrate ( a base material on which is it worked on ) at very high speed to improve or alter its near surface region. The typical method of ion production is by the use of an accelerator. In this device an inert gas ( e.g. nitrogen, neon ) is fed into an ion source and electrons from a highly heated filament will ionize the gas to form plasma. The positive ions of the gas will then be channeled through an accelerator in a vacuum chamber before impinging on the surface of the target substrate. Typical depth of penetration is about 0.1 micron.
The buzz about ion-implantation:
Ion-implantation is different from surface coating. Unlike surface coating where the substrate thickness is compromised and the surface can be de-laminated over time, ion-implantation results in the ions surrounded by the atoms of the original surface material of the substrate. It produces no discrete coating and eliminates the problem of de-lamination due to wear and tear.
Uses of ion-implantation:
Semiconductor manufacturing The semiconductor industry is one of the first to implement ion-implantation. Manufacture of the Integrated Circuit ( IC ) is made possible because of innovative ion-implantation. The advent of the IC paved the road for the information boom in a short span of less than 50 years.
Metallurgy – Ion-implantation do away with the hazardous plating materials using hexavalent chromium. This alternative method also complies with environmental and health standards.
Toughening of steel – Ions of inert gas are implanted on steel products needed for high stress operations. Drill bits are treated this way and the ion implantation prevents fractures and corrosion.
The future of low energy ion-implantation with neon :
This novel idea – called Plasma Source Ion Implantation – is ultra-low energy and has applications for very shallow surface treatment of substrate materials. It addresses the problem of overheating of the substrate and provides for even distribution of implantation.
Low energy ion-implantation is an exciting and emerging field with huge potential in the semiconductor industry.
As semiconductor devices and its power consumption continues to shrink due to customer demands, the industry is relooking into the method of low energy ion-implantation to avoid the problem of reliability issues in the form of data loss and leakage in the ever shrinking semiconductor device. Low energy ion-implantation using neon ions allow for very small electrical conduits to be formed without compromising on performance. This method also does away with chlorine as the gas of choice for ion-implantation, thereby reducing the need for hazardous gases.
Further reading :
Microchip manufacturing by S.Wolf
Ultra-shallow p+/n junction formed by plasma source ion implantation and solid boron http://ieeexplore.ieee.org/Xplore/login.jsp?url=/iel3/4742/13168/00604891.pdf
